3-dimensional nano-CMOS transistors to overcome scaling limits

Among the several approaches to overcome the scaling limit of silicon devices, in this paper we introduce recent achievements in the fabrication of transistors for SRAM, DRAM and Flash memories as well as the logic devices with high performance requirement. Among them are S3 (stacked single-crystal silicon) cell for SRAMs, RCAT (recessed cell array transistor), PiFET (partially-insulated MOSFET) and FinFET for DRAMs and MBCFET (multi-bridge channel MOSFET) for high performance logic applications. These 3 dimensional devices are easily adapted to the products showing excellent performance.