Title :
Fabrication, device design and mobility enhancement of germanium channel MOSFETs
Author :
Shang, Huiling ; Gousev, E. ; Gribelyuk, M. ; Chu, J.O. ; Mooney, P.M. ; Wang, X. ; Guarini, K.W. ; Ieong, M.
Author_Institution :
IBM Semicond. R&D Center Res. Div., T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper reviews the current critical issues on the fabrication of Ge surface channel MOSFET devices. Compared with surface channel Ge MOSFETs, strained Ge buried channel structures can be integrated with fewer processing challenges to achieve significantly enhanced hole mobility and an improved electron mobility. The device design and scalability of the strained Ge buried channel MOSFETs are presented based on our recent results.
Keywords :
MOSFET; electron mobility; germanium; hole mobility; semiconductor device manufacture; semiconductor devices; MOSFET devices; buried channel structures; device design; electron mobility; germanium surface channel; hole mobility; mobility enhancement; Fabrication; Frequency; Germanium; High-K gate dielectrics; MOS capacitors; MOSFETs; Nitrogen; Passivation; Surface cleaning; Surface treatment;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435013
