DocumentCode
3598824
Title
Key attributes and solutions of CMP process for advanced Cu damascene interconnects
Author
Wang, Shumin
Author_Institution
Cabot Microelectron. Corp., Aurora, IL, USA
Volume
1
fYear
2004
Firstpage
503
Abstract
This paper provides a brief introduction of CMP evolution for Cu damascene interconnects including its technology, performance drivers, and unique set of challenges. A manufacturing worthy Cu CMP solution calls attention to all key attributes involved. Discussions and examples are centered around corrosion control, role of abrasive in maintaining chemical and mechanical balance, scratch reduction and overall Cu/barrier process integration.
Keywords
chemical mechanical polishing; copper; integrated circuit interconnections; CMP process; Cu; Cu damascene interconnects; Cu-barrier process integration; chemical balance; corrosion control; mechanical balance; scratch reduction; Capacitance; Chemical technology; Copper; Corrosion; Delamination; Dielectric constant; Dielectric films; Dielectric materials; Surfaces; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435057
Filename
1435057
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