A 3-D wafer level hermetical packaging for MEMS

Author

Jin, Y.F. ; Wei, J. ; Qi, G.J. ; Wang, Z.F. ; Lim, P.C. ; Wong, C.K.

Author_Institution

Singapore Inst. of Manuf. Technol., Singapore

Volume

1

fYear

2004

Firstpage

607

Abstract

In this paper, a 3D wafer-level hermetical packaging solution for micro-electromechanical-system (MEMS) is presented. The MEMS wafer is sandwiched between a top glass wafer and a bottom Si substrate wafer. With the assistance of a gold intermediate layer, the bottom Si wafer is hermetically sealed to the MEMS wafer with 3D electric feed-through connecting the metal pads on MEMS wafer with solder balls or bonding pads on bottom wafer for flip chip process. The bond strength is higher than 5 MPa.

Keywords

flip-chip devices; hermetic seals; micromechanical devices; semiconductor device packaging; wafer bonding; 3D electric feed-through; 3D wafer level hermetical packaging; MEMS packaging; MEMS wafer; bonding pads; bottom Si substrate wafer; flip chip process; gold intermediate layer; hermetical sealing; metal pads; micro-electromechanical-system; solder balls; top glass wafer; Fabrication; Glass; Gold; Hermetic seals; Micromechanical devices; Protection; Semiconductor device packaging; Wafer bonding; Wafer scale integration; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435079

Filename

1435079