• DocumentCode
    3598931
  • Title

    Worst-case parameters derived from device physics

  • Author

    Prigge, O. ; Miura-Mattausch, M. ; Savignac, D. ; Feldmann, U.

  • Author_Institution
    Semicond. Div., Siemens AG, Munich, Germany
  • Volume
    1
  • fYear
    1996
  • Firstpage
    101
  • Abstract
    We have developed a new concept for deriving worst-case parameters based on device physics. With the concept it will be shown that we can predict worst-case performances at device and circuit levels accurately from in-line measurements of technological parameter variations without statistical study
  • Keywords
    semiconductor device models; tolerance analysis; circuit level; device physics; in-line measurements; technological parameters; worst-case parameters; Circuit simulation; Coupling circuits; Doping profiles; Equations; Gaussian distribution; Histograms; MOSFETs; Performance evaluation; Physics; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
  • Print_ISBN
    0-7803-3073-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1996.539818
  • Filename
    539818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3598931