CMOS integration of a thermal pressure sensor system

Author

Haberli, A. ; Paul, O. ; Malcovati, P. ; Faccio, M. ; Maloberti, E. ; Baltes, H.

Author_Institution

Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland

Volume

1

fYear

1996

Firstpage

377

Abstract

We report the integration of a CMOS thermal pressure sensor system for the range of 10² to 10⁶ Pa. The operating principle of the sensor is based on the pressure-dependent heat transfer across the air gap separating a heat source from a heat sink. After completion of the double metal CMOS process the sensor structure is obtained by a fully CMOS-compatible sacrificial metal etching. The microsystem includes both sensor and a readout circuit. The interface circuit compensates for temperature effects and provides a bitstream at the system output representing the ambient pressure

Keywords

CMOS integrated circuits; microsensors; pressure sensors; 1E2 to 1E6 Pa; air gap; bitstream; double metal CMOS process; heat transfer; interface circuit; microsystem; readout circuit; sacrificial metal etching; temperature compensation; thermal pressure sensor; CMOS process; Circuits; Etching; Heat engines; Heat sinks; Heat transfer; Resistance heating; Sensor systems; Temperature sensors; Thermal sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on

Print_ISBN

0-7803-3073-0

Type

conf

DOI

10.1109/ISCAS.1996.539908

Filename

539908