Title :
Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications
Author :
Le Gallou, Nicolas ; Vidkjaer, J. ; Poivey, C.
Author_Institution :
ESTEC, Eur. Space Agency, Noordwijk, Netherlands
Abstract :
This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%-82% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; spaceborne radar; wide band gap semiconductors; Biomass project; GaN; HEMT; LDMOS FET; LDMOS technology; P-band HPA; class PAE; efficiency 70 percent to 82 percent; frequency 435 MHz; power 120 W to 200 W; radiation tests; spaceborne P-band radar applications; Gallium nitride; Ions; Logic gates; Power amplifiers; Power generation; Radio frequency; Transistors;
Conference_Titel :
Microwave Conference (EuMC), 2012 42nd European
Print_ISBN :
978-1-4673-2215-7
Electronic_ISBN :
978-2-87487-026-2
