Title :
Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors
Author :
Suoming Zhang ; Dedong Han ; Shuyang Wang ; Yu Tian ; Dongfang Shan ; Fuqing Huang ; Yingying Cong ; Shengdong Zhang ; Xing Zhang ; Yi Wang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
We reported the bottom gate type fully transparent Ga-doped ZnO TFTs fabricated on glass substrate at room temperature. The effect of O2/Ar ratio during channel layer deposition on the electrical properties of the device was investigated. The results showed that the TFTs fabricated at O2/Ar ratio of 25/75 exhibited the best characteristic with the saturation mobility of 14.15cm2/V·s, the subthreshold swing (SS) of 422mV/dec, the threshold voltage (Vt) of 4.9V and the on/off current ratio of 2×107. Futhermore, the effect of post-annealing temperature was studied, too. It turned out the properties of TFTs were improved after post-annealing, and which reached the best after 250°C post-annealing, with the saturation mobility of 262.49 cm2/V·s, the subthreshold swing of 138mV/dec, the threshold voltage of 3V and the on/off current ratio of 2×109.
Keywords :
II-VI semiconductors; annealing; carrier mobility; electrical conductivity; gallium; semiconductor growth; semiconductor thin films; sputter deposition; thin film transistors; wide band gap semiconductors; zinc compounds; O2-Ar ratio; RF magnetron sputtering; SiO2; ZnO:Ga; bottom gate fully transparent TFT; channel layer deposition; electrical properties; fabrication optimization; gallium-doped zinc oxide thin film transistors; glass substrate; on-off current ratio; post-annealing temperature; saturation mobility; subthreshold swing; temperature 250 degC; temperature 293 K to 298 K; threshold voltage; Annealing; Films; Glass; Logic gates; Temperature; Thin film transistors; Zinc oxide;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
