Title :
W-band MMIC amplifiers based on quarter micron gate-length InP HEMTs and coplanar waveguides
Author :
Berg, M. ; Hackbarth, T. ; Maile, B.E. ; Dickmann, J. ; G?¼hl, R. ; Adelseck, B. ; Hartnagel, H.L.
Author_Institution :
Daimler-Benz AG, Ulm, Germany
Abstract :
A family of one, two and three stage monolithic amplifiers on InP substrate for W-band applications are presented. The circuits are realized with lattice matched InAlAs-InGaAs-InP HEMTs with a gate-width of WG=2×40 μm and T-gates with a gate-length of L G=0.25 μm. Coplanar waveguides and lumped elements are used for the matching and biasing networks. The circuits are fully passivated and contain common ports for the gate and the drain bias. A gain of 5.5, 11 and 14.5 dB and an input and output matching better than -10 dB were achieved for the one, two and three stage amplifiers at 80 GHz, respectively. The measured results show a good scaling of the achieved gain between the one and the multiple stage amplifiers and a good correlation with the simulated results
Keywords :
HEMT integrated circuits; MMIC amplifiers; coplanar waveguides; field effect MIMIC; impedance matching; integrated circuit modelling; millimetre wave amplifiers; 0.25 micron; 5.5 to 14.5 dB; 80 GHz; CPW; EHF; InAlAs-InGaAs-InP; InP; InP substrate; MIMIC; W-band MMIC amplifiers; biasing networks; coplanar waveguides; lattice matched HEMTs; matching networks; monolithic amplifiers; Circuits; Coplanar waveguides; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MMICs; MODFETs;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491937
