DocumentCode
3599608
Title
Low Voltage CMOS Active Inductor with Bandwidth and Linearity Improvement
Author
Meharde, Priya ; Niranjan, Vandana ; Kumar, Ashwni
Author_Institution
Dept. of Electron. & Commun. Eng., Indira Gandhi Delhi Tech. Univ. for Women, New Delhi, India
fYear
2014
Firstpage
79
Lastpage
83
Abstract
In this work a current regulated CMOS active inductor is proposed using dynamic threshold MOS transistor (DTMOS). The proposed active inductor is based on the gyrator-C approach with positive transconductance stage realized by DTMOS. The bandwidth and linearity of proposed inductor is improved using a new approach. The proposed approach is based on simultaneous use of inductive peaking and feed-forward current source technique Simulated result shows that DTMOS in the proposed circuit gives a high linearity in the active inductor´s characteristics and a bandwidth extension ratio of 3.5 is achieved. The proposed circuit has been designed using the TSMC 180nm technology node at 1V supply to prove the validity of the concept.
Keywords
CMOS integrated circuits; MOSFET; constant current sources; feedforward; gyrators; inductors; DTMOS; TSMC; bandwidth extension ratio; bandwidth improvement; complementary metal oxide semiconductor; current regulation; dynamic threshold MOS transistor; feed-forward current source technique; gyrator-C approach; inductive peaking; linearity improvement; low voltage CMOS active inductor; positive transconductance stage; size 180 nm; voltage 1 V; Active inductors; Bandwidth; CMOS integrated circuits; Linearity; MOSFET; Radio frequency; CMOS active inductor; bandwidth; dynamic threshold MOS; feed-forward; inductive peaking; linearity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic System Design (ISED), 2014 Fifth International Symposium on
Print_ISBN
978-1-4799-6964-7
Type
conf
DOI
10.1109/ISED.2014.24
Filename
7172751
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