Title :
Low Voltage CMOS Active Inductor with Bandwidth and Linearity Improvement
Author :
Meharde, Priya ; Niranjan, Vandana ; Kumar, Ashwni
Author_Institution :
Dept. of Electron. & Commun. Eng., Indira Gandhi Delhi Tech. Univ. for Women, New Delhi, India
Abstract :
In this work a current regulated CMOS active inductor is proposed using dynamic threshold MOS transistor (DTMOS). The proposed active inductor is based on the gyrator-C approach with positive transconductance stage realized by DTMOS. The bandwidth and linearity of proposed inductor is improved using a new approach. The proposed approach is based on simultaneous use of inductive peaking and feed-forward current source technique Simulated result shows that DTMOS in the proposed circuit gives a high linearity in the active inductor´s characteristics and a bandwidth extension ratio of 3.5 is achieved. The proposed circuit has been designed using the TSMC 180nm technology node at 1V supply to prove the validity of the concept.
Keywords :
CMOS integrated circuits; MOSFET; constant current sources; feedforward; gyrators; inductors; DTMOS; TSMC; bandwidth extension ratio; bandwidth improvement; complementary metal oxide semiconductor; current regulation; dynamic threshold MOS transistor; feed-forward current source technique; gyrator-C approach; inductive peaking; linearity improvement; low voltage CMOS active inductor; positive transconductance stage; size 180 nm; voltage 1 V; Active inductors; Bandwidth; CMOS integrated circuits; Linearity; MOSFET; Radio frequency; CMOS active inductor; bandwidth; dynamic threshold MOS; feed-forward; inductive peaking; linearity;
Conference_Titel :
Electronic System Design (ISED), 2014 Fifth International Symposium on
Print_ISBN :
978-1-4799-6964-7
DOI :
10.1109/ISED.2014.24