Title :
1.27 μm resonant cavity PIN photodetector using an InAs/GaAs quantum dot active region grown on GaAs
Author :
Huffaker, D.L. ; Deng, H. ; Campbell, J.C. ; Deppe, D.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this talk we describe, to our knowledge, the first optoelectronic device based on InGaAs quantum dots (QDs) grown directly on GaAs that operate at 1.3 μm. The device is an InAs-GaAs QD resonant cavity PIN photodiode, which shows a surprisingly high 49% peak detection efficiency at the wavelength of 1267 nm
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; high-speed optical techniques; indium compounds; molecular beam epitaxial growth; optical resonators; optical resonators5795175; optoelectronic devices; p-i-n photodiodes; photodetectors; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; 1.3 mum; 1267 nm; 49 percent; InAs-GaAs; InAs-GaAs QD resonant cavity PIN photodiode; InAs/GaAs quantum dot active region grown; mbe growth; optoelectronic device; peak detection efficiency; resonant cavity PIN photodetector; Absorption; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Photodetectors; Photodiodes; Quantum dots; Resonance; US Department of Transportation; Zinc compounds;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630603
