DocumentCode
3599800
Title
Terahertz parametric gain in semiconductor superlattices
Author
Hyart, Timo ; Shorokhov, Alexey V. ; Alekseev, Kirill N.
Author_Institution
Dept. of Phys. Sci., Univ. of Oulu, Oulu
fYear
2007
Firstpage
472
Lastpage
473
Abstract
We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron´s effective mass in miniband, which result in a parametric resonance. We have established a theoretical feasibility of phase-sensitive parametric amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. Therefore a formation of destructive domains of high electric field inside the superlattice can be prevented. Here we concentrate on the parametric up- and down-conversion of electromagnetic radiation from available frequencies to desirable THz frequency range.
Keywords
amplification; electric field effects; microwave parametric amplifiers; semiconductor superlattices; AC electric field; DC electric field; electromagnetic radiation; high-frequency response; parametric down-conversion; parametric up-conversion; phase-sensitive parametric amplification; semiconductor superlattice; superlattice miniband; terahertz parametric gain; Absorption; Effective mass; Electromagnetic radiation; Electrons; Frequency; Nonlinear optics; Optical pumping; Probes; Resonance; Semiconductor superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Print_ISBN
978-1-4244-1438-3
Type
conf
DOI
10.1109/ICIMW.2007.4516587
Filename
4516587
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