• DocumentCode
    3599803
  • Title

    Characterization of low-temperature microwave annealed PZT thin films with various thicknesses

  • Author

    Bhaskar, Ankam ; Chang, T.H. ; Chang, H.Y. ; Cheng, S.Y.

  • Author_Institution
    Dept. of Phys., Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2007
  • Firstpage
    526
  • Lastpage
    527
  • Abstract
    Ferroelectric lead zirconium titanate (Pb (ZrxTi1-x) O3) thin films with various thicknesses were fabricated on Pt/Ti/SiO2/Si substrates using the sol-gel method with 2.45 GHz microwave energy. Investigations have been made on the crystal structure, surface morphology, dielectric and ferroelectric properties of the films. The thicknesses of PZT film were in the range of 99 to 420 nm, and films were annealed at 450degC for 30 min. The 99 and 168 nm-thick PZT films have mixed pyrochlore and perovskite phases. Above 168 nm-thick PZT films have complete perovskite phase. The full width at half maximum (FWHM), and the surface roughness were decreased as the film thickness increased. Relative dielectric constant and remnant polarization increased as the film thickness increased, which reflect the difference in crystallinity.
  • Keywords
    annealing; crystal structure; ferroelectric thin films; permittivity; piezoelectric thin films; sol-gel processing; surface morphology; surface roughness; PbZrO3TiO3; crystal structure; crystallinity; dielectric properties; ferroelectric properties; frequency 2.45 GHz; low-temperature microwave annealed PZT thin films; perovskite phase; pyrochlore phase; relative dielectric constant; remnant polarization; size 99 nm to 420 nm; sol-gel method; surface morphology; surface roughness; temperature 450 C; time 30 min; Annealing; Dielectric substrates; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Lead; Optical films; Surface morphology; Transistors; Zirconium; Ferroelectric; PZT; perovskite phase;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
  • Print_ISBN
    978-1-4244-1438-3
  • Type

    conf

  • DOI
    10.1109/ICIMW.2007.4516614
  • Filename
    4516614