Title :
Characterization of a 0.16mm CMOS Technology using SEMATECH ESD Benchmarking structures
Author :
Ashton, R.A. ; Smooha, Y.
Author_Institution :
Agere Syst., Orlando, FL, USA
Abstract :
A 0.16 mm CMOS Technology has been characterized using SEMATECH ESD Benchmarking test structures. The usefulness of the structures is shown with regard to device layout and process issues. Areas where the structures need improvement are also examined.
Keywords :
MOSFET; benchmark testing; electrostatic discharge; semiconductor device models; semiconductor device testing; CMOS technology; SEMATECH ESD benchmarking test structure; channel transistor; semiconductor device layout; size 0.16 mm; Breakdown voltage; CMOS technology; Circuit testing; Current measurement; Electrostatic discharge; Geometry; Integrated circuit technology; Protection; Time measurement; Transmission line measurements;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Print_ISBN :
978-1-5853-7039-9
Electronic_ISBN :
978-1-5853-7039-9
