Title :
Ultrafast electronic processes in porous silicon
Author :
Fauchet, Philippe M.
Author_Institution :
Dept. of Electr. Eng., Rochester Univ., NY
Abstract :
Time-resolved photoluminescence and induced absorption measurements are used to investigate the ultrafast electronic processes in porous silicon. We observe transients ranging from less than 100 femtoseconds to well in excess of 10 microseconds. They are interpreted in terms of carrier thermalization, trapping and recombination
Keywords :
silicon; 100 fs to 10 ms; Si; carrier recombination; carrier thermalization; carrier trapping; induced absorption; porous silicon; time-resolved photoluminescence; transients; ultrafast electronic processes; Absorption; Electron traps; Light emitting diodes; Luminescence; Radiative recombination; Silicon; Spontaneous emission; Temperature; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587015
