Title :
Strained quantum well AlGaInP visible laser diodes
Author :
Honda, S. ; Shono, M. ; Yodoshi, K. ; Yamaguchi, T. ; Niina, T.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
We investigated a strain-compensated MQW structure in order to introduce a large strain into a AlGaInP quantum well and achieved a low-threshold 630-nm-band laser diode with a high maximum operating temperature for the first time. The active region consists of tensile strained quantum wells and compressively strained quantum barriers. Using the strain-compensating technique, a large tensile strain can be introduced to the quantum well without misfit dislocations
Keywords :
quantum well lasers; 633 nm; AlGaInP; AlGaInP visible laser diodes; compressively strained quantum barriers; maximum operating temperature; strain-compensated MQW; tensile strained quantum wells; Capacitive sensors; Diode lasers; Electrons; Gas lasers; Light sources; Microelectronics; Quantum well devices; Temperature; Tensile strain; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587018
