Diamond wafer for SAW application

Author

Fujii, S. ; Seki, Y. ; Yoshida, K. ; Nakahata, H. ; Higaki, K. ; Kitabayashi, H. ; Shikata, S.

Author_Institution

Res. Lab. Sumitomo Electr. Ind., Hyogo, Japan

Volume

1

fYear

1997

Firstpage

183

Abstract

A three inch wafer of polycrystalline diamond on silicon has been successfully developed. High uniformity of quality of diamond and almost defect free diamond surface associated with high quality ZnO exhibit wonderful performance of diamond SAW devices. It was also observed that this material system has super high power handling capability, smaller temperature deviation compared with 36 Y cut and ST cut quartz, low phase slope characteristics in the passband, and extremely high breakdown voltage. A variety of applications are expected with the material system utilizing these features

Keywords

band-pass filters; diamond; electric breakdown; elemental semiconductors; surface acoustic wave devices; surface acoustic wave filters; surface topography; C; SAW application; SAW devices; SAW filters; Si; Si surface; almost defect free diamond surface; applications; diamond wafer; extremely high breakdown voltage; high power handling capability; low phase slope characteristics; passband; performance; polycrystalline diamond; temperature deviation; three inch wafer; Acoustic materials; Radio frequency; SAW filters; Silicon; Sputtering; Substrates; Surface acoustic wave devices; Surface acoustic waves; Temperature; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1997. Proceedings., 1997 IEEE

ISSN

1051-0117

Print_ISBN

0-7803-4153-8

Type

conf

DOI

10.1109/ULTSYM.1997.663006

Filename

663006