Evidence for Enhanced Reliability in a Novel Nanoscale Partially-Depleted SOI MOSFET

This paper presents a new partially-depleted silicon-n-insulator (SOI) metal-oxide-semiconductor field effect transistor in order to improve the reliability successfully. An interfacial layer with the heavily doped n⁺ and p⁺ silicon is presented between the buried oxide and the source and channel regions. The presence of the interfacial layer causes the potential distribution modified inside the channel, and the minimum potential is pushed toward the interfacial layer, and therefore, the floating-body effect, which is one of important factors to characterize the reliability, is impressively reduced, and therefore, reliability of the proposed structure increases. Many main characteristics have been evaluated to compare the proposed structure performance with that of a conventional SOI. With regard to simulated transient, dc, and small-signal behaviors, the proposed structure shows marvelous performance improvement when compared with the conventional SOI.