• DocumentCode
    3600643
  • Title

    On the Energy-Efficiency of Byte-Addressable Non-Volatile Memory

  • Author

    Vandierendonck, Hans ; Hassan, Ahmad ; Nikolopoulos, Dimitrios S.

  • Volume
    14
  • Issue
    2
  • fYear
    2015
  • Firstpage
    144
  • Lastpage
    147
  • Abstract
    Non-volatile memory (NVM) technology holds promise to replace SRAM and DRAM at various levels of the memory hierarchy. The interest in NVM is motivated by the difficulty faced in scaling DRAM beyond 22 nm and, long-term, lower cost per bit. While offering higher density and negligible static power (leakage and refresh), NVM suffers increased latency and energy per memory access. This paper develops energy and performance models of memory systems and applies them to understand the energy-efficiency of replacing or complementing DRAM with NVM. Our analysis focusses on the application of NVM in main memory. We demonstrate that NVM such as STT-RAM and RRAM is energy-efficient for memory sizes commonly employed in servers and high-end workstations, but PCM is not. Furthermore, the model is well suited to quickly evaluate the impact of changes to the model parameters, which may be achieved through optimization of the memory architecture, and to determine the key parameters that impact system-level energy and performance.
  • Keywords
    DRAM chips; SRAM chips; energy conservation; memory architecture; DRAM; NVM technology; PCM; RRAM; SRAM; STT-RAM; byte-addressable nonvolatile memory technology; energy efficiency; impact system-level energy; memory architecture; memory hierarchy; memory systems; static power; Computational modeling; Enery efficiency; Mathematical model; Memory management; Nonvolatile memory; Phase change materials; Random access memory; Main memory systems, non-volatile memory, energy, modeling;
  • fLanguage
    English
  • Journal_Title
    Computer Architecture Letters
  • Publisher
    ieee
  • ISSN
    1556-6056
  • Type

    jour

  • DOI
    10.1109/LCA.2014.2355195
  • Filename
    6893025