Title :
Comparator Power Reduction in Low-Frequency SAR ADC Using Optimized Vote Allocation
Author :
Ahmadi, Muhammad ; Won Namgoong
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
When operating at scaled supply voltages, the primary source of performance degradation in a successive approximation register (SAR) analog-to-digital converter (ADC) is the comparator thermal noise. Low-noise comparator can be used but at the expense of increased power dissipation. This paper presents an approach to reduce the comparator power in SAR ADCs. A mathematical model of a SAR ADC derived in this paper suggests that using the same comparator noise variance for each bit cycle is suboptimal and results in more power consumption than necessary. A noise programmable comparator based on majority vote technique is proposed to adjust the comparator noise performance at each bit step. As a proof of concept, a 10-bit SAR ADC that operates at 0.5-V supply voltage and supports a flexible differential input dynamic range from 0.4 to 1 V has been fabricated in 65-nm CMOS process. The prototype achieves an effective number of bits ranging from 7.1 to 9.1 bits and a figure of merit from 3.3 to 6.8 fJ/conversion step while operating at 250 kS/s.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); power consumption; thermal noise; CMOS process; analog-to-digital converter; comparator noise variance; comparator power reduction; comparator thermal noise; complementary metal oxide semiconductor; low-frequency SAR ADC; noise programmable comparator; optimized vote allocation; power consumption; power dissipation; size 65 nm; successive approximation register; voltage 0.4 V to 1 V; word length 10 bit; Capacitors; Mathematical model; Nickel; Noise; Power demand; Probability distribution; Thermal noise; Analog-to-digital converter (ADC); comparator noise; majority vote; noise analysis; optimization; successive approximation register (SAR); successive approximation register (SAR).;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2014.2362545