DocumentCode
3600761
Title
High-Endurance Hybrid Cache Design in CMP Architecture With Cache Partitioning and Access-Aware Policies
Author
Ing-Chao Lin ; Jeng-Nian Chiou
Author_Institution
Dept. of Comput. Sci. & Inf. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
23
Issue
10
fYear
2015
Firstpage
2149
Lastpage
2161
Abstract
In recent years, nonvolatile memory (NVM) technologies, such as spin-transfer torque random-access memory (RAM) (STT-RAM) and phase change RAM, have drawn a lot of attention due to their low leakage and high density. However, both of these NVMs suffer from high write latency and limited endurance problems. To mitigate the write pressure on NVM, many static RAM (SRAM)/NVM hybrid cache designs have been proposed with write management policies. Unfortunately, existing hybrid cache designs do not consider the unbalanced workload of each core in (chip multiprocessor) architecture, resulting in unbalanced wear out of hybrid caches. This paper considers the unbalanced write distribution of a hybrid cache for CMP architecture as well as a novel hybrid cache design that includes SRAM cache, STT-RAM cache, and STT-RAM/SRAM hybrid cache banks. Based on the proposed hybrid cache design, two access-aware policies are proposed to mitigate unbalanced wearout of the STT-RAM region, and a wearout-aware dynamic cache partitioning scheme is proposed to dynamically partition the hybrid cache, improving the unbalanced write pressure among different cache partitions. The experimental results show that our proposed scheme and policies can achieve an average of 89 times improvement in cache lifetime and are able to reduce energy consumption by 58% compared with a SRAM cache.
Keywords
SRAM chips; logic design; memory architecture; random-access storage; storage management; CMP architecture; NVM technology; STT-RAM/SRAM hybrid cache bank; access-aware policies; chip multiprocessor architecture; energy consumption; high-endurance hybrid cache design; nonvolatile memory technology; phase change RAM; spin-transfer torque random-access memory; wearout-aware dynamic cache partitioning scheme; Energy consumption; Magnetic tunneling; Memory management; Nonvolatile memory; Phase change random access memory; Dynamic cache partitioning; hybrid L2 cache; hybrid bank; management policy; spin-transfer torque RAM (STT-RAM); wear leveling; wear leveling.;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2014.2361150
Filename
6942248
Link To Document