DocumentCode :
3600874
Title :
Resistive Associative Processor
Author :
Yavits, Leonid ; Kvatinsky, Shahar ; Morad, Amir ; Ginosar, Ran
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
14
Issue :
2
fYear :
2015
Firstpage :
148
Lastpage :
151
Abstract :
Associative Processor (AP) combines data storage and data processing, and functions simultaneously as a massively parallel array SIMD processor and memory. Traditionally, AP is based on CMOS technology, similar to other classes of massively parallel SIMD processors. The main component of AP is a Content Addressable Memory (CAM) array. As CMOS feature scaling slows down, CAM experiences scalability problems. In this work, we propose and investigate an AP based on resistive CAM-the Resistive AP (ReAP). We show that resistive memory technology potentially allows scaling the AP from a few millions to a few hundred millions of processing units on a single silicon die. We compare the performance and power consumption of a ReAP to a CMOS AP and a conventional SIMD accelerator (GPU) and show that ReAP, although exhibiting higher power density, allows better scalability and higher performance.
Keywords :
content-addressable storage; parallel processing; CAM array; CMOS feature scaling; CMOS technology; GPU; ReAP; SIMD accelerator; complimentary metal oxide semiconductor; content addressable memory array; data processing; data storage; graphics processing unit; massively parallel array SIMD processor; memory function; resistive associative processor; Associative processing; CMOS integrated circuits; Computer aided manufacturing; Memristors; Random access memory; Associative Processor; In-Memory Computing; Memristor; Resistive RAM; SIMD; associative processor; in-memory computing; memristor; resistive RAM;
fLanguage :
English
Journal_Title :
Computer Architecture Letters
Publisher :
ieee
ISSN :
1556-6056
Type :
jour
DOI :
10.1109/LCA.2014.2374597
Filename :
6966736
Link To Document :
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