• DocumentCode
    3601296
  • Title

    Analytical Fault Tolerance Assessment and Metrics for TSV-Based 3D Network-on-Chip

  • Author

    Eghbal, Ashkan ; Yaghini, Pooria M. ; Bagherzadeh, Nader ; Khayambashi, Misagh

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Irvine, Irvine, CA, USA
  • Volume
    64
  • Issue
    12
  • fYear
    2015
  • Firstpage
    3591
  • Lastpage
    3604
  • Abstract
    Reliability is one of the most challenging problems in the context of three-dimensional network-on-chip (3D NoC) systems. Reliability analysis is prominent for early stages of the manufacturing process in order to prevent costly redesigns of a target system. This article classifies the potential physical faults of a baseline TSV-based 3D NoC architecture by targeting two-dimensional (2D) NoC components and their inter-die connections. In this paper, through-silicon via (TSV) issues, thermal concerns, and single event effect (SEE) are investigated and categorized, in orderto propose evaluation metrics for inspecting the resiliency of 3D NoC designs. A reliability analysis for major source of faults is reported in this article separately based on their mean time to failure (MTTF). TSV failure probability induced by inductive and capacitive coupling is also discussed. Finally, the paper provides a formal reliability analysis on the aggregated faults that affect TSV. This formal analysis is critical for estimating the resiliency of different components in order to mitigate the redundancy cost of fault-tolerant design or to examine the efficiency of any proposed fault-tolerant methods for 3D NoC architectures.
  • Keywords
    network-on-chip; probability; reliability; three-dimensional integrated circuits; MTTF; TSV failure probability; TSV-based 3D NoC architecture; analytical fault tolerance assessment; mean time to failure; reliability analysis; single event effect; thermal concerns; three-dimensional network-on-chip systems; through-silicon via issues; Circuit faults; Reliability; Thermal stresses; Three-dimensional displays; Through-silicon vias; 3D NoC; Reliability analysis; Reliability analysis, 3D NoC, TSV, thermal, SEE, fault; SEE impacts; TSV; Thermal concern;
  • fLanguage
    English
  • Journal_Title
    Computers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9340
  • Type

    jour

  • DOI
    10.1109/TC.2015.2401016
  • Filename
    7035006