Title :
Decoupling Capacitor Topologies for TSV-Based 3-D ICs With Power Gating
Author :
Hailang Wang ; Salman, Emre
Author_Institution :
Dept. of Electr. & Comput. Eng., Stony Brook Univ., Stony Brook, NY, USA
Abstract :
In traditional decoupling capacitor topologies, power gating can significantly degrade the system-wide power integrity of a 3-D integrated circuit since the decoupling capacitance associated with the power-gated block/plane becomes ineffective for the neighboring, active planes. Two topologies are investigated to alleviate this issue by exploiting: 1) relatively low-resistance through silicon vias (TSVs) and 2) ability of TSVs to bypass plane-level power networks when delivering the power supply voltage. In the proposed topologies, decoupling capacitors placed within a plane can provide charge to neighboring planes even when the plane is power gated, achieving up to 50% and 87% reduction in, respectively, rms power supply and power gating (in-rush current) noise at the expense of a moderate increase in physical area and peak power consumption.
Keywords :
capacitors; integrated circuit interconnections; network topology; three-dimensional integrated circuits; 3D integrated circuit; TSV based 3D IC; bypass plane-level power networks; decoupling capacitor topologies; power gating; through silicon vias; Capacitance; Capacitors; Noise; Power supplies; Switching circuits; Through-silicon vias; Topology; Power dissipation; three-dimensional integrated circuits; through-silicon vias; very large scale integration; very large scale integration.;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2014.2386253