• DocumentCode
    3602246
  • Title

    Decoupling Capacitor Topologies for TSV-Based 3-D ICs With Power Gating

  • Author

    Hailang Wang ; Salman, Emre

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Stony Brook Univ., Stony Brook, NY, USA
  • Volume
    23
  • Issue
    12
  • fYear
    2015
  • Firstpage
    2983
  • Lastpage
    2991
  • Abstract
    In traditional decoupling capacitor topologies, power gating can significantly degrade the system-wide power integrity of a 3-D integrated circuit since the decoupling capacitance associated with the power-gated block/plane becomes ineffective for the neighboring, active planes. Two topologies are investigated to alleviate this issue by exploiting: 1) relatively low-resistance through silicon vias (TSVs) and 2) ability of TSVs to bypass plane-level power networks when delivering the power supply voltage. In the proposed topologies, decoupling capacitors placed within a plane can provide charge to neighboring planes even when the plane is power gated, achieving up to 50% and 87% reduction in, respectively, rms power supply and power gating (in-rush current) noise at the expense of a moderate increase in physical area and peak power consumption.
  • Keywords
    capacitors; integrated circuit interconnections; network topology; three-dimensional integrated circuits; 3D integrated circuit; TSV based 3D IC; bypass plane-level power networks; decoupling capacitor topologies; power gating; through silicon vias; Capacitance; Capacitors; Noise; Power supplies; Switching circuits; Through-silicon vias; Topology; Power dissipation; three-dimensional integrated circuits; through-silicon vias; very large scale integration; very large scale integration.;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2014.2386253
  • Filename
    7106510