DocumentCode
3602267
Title
Magnetic Interaction and Electronic Transport in La0.4Bi0.6Mn0.5Ti0.5O3 Manganite
Author
Dayal, Vijaylakshmi ; Punith Kumar, V. ; Hadimani, R.L. ; Balfour, E.A. ; Fu, H. ; Jiles, D.C.
Author_Institution
Dept. of Phys., Maharaja Inst. of Technol. Mysore, Mysore, India
Volume
51
Issue
11
fYear
2015
Firstpage
1
Lastpage
4
Abstract
We report magnetic interactions and electronic transport properties in La0.4Bi0.6Mn0.5Ti0.5O3 perovskite manganite synthesized using solid-state route. After characterizing the samples structurally, the systematic investigations of magnetic and electrical transport behaviors have been undertaken. It has been observed that at low temperatures near TC, the sample is magnetically frustrated leading to the second-order magnetic transition. A justification for the observed magnetic behavior has been explained based on Arrott´s plot study. The resistivity as a function of temperature in the absence and the presence of applied magnetic field suggests semiconducting nature of the sample. The conduction of the charge carriers is explained using Shklovskii-Efros-type variable-range-hopping mechanism.
Keywords
bismuth compounds; crystal growth; frustration; hopping conduction; lanthanum compounds; lattice constants; magnetic semiconductors; magnetic transitions; magnetoresistance; manganese compounds; semiconductor growth; Arrott plot; La0.4Bi0.6Mn0.5Ti0.5O3; Shklovskii-Efros-type variable range hopping mechanism; applied magnetic field; charge carrier conduction; electronic transport properties; lanthanum bismuth manganite titania perovskite; lattice parameters; low-temperature effects; magnetic frustratation; magnetic interaction; magnetoresistance; resistivity; second-order magnetic transition; semiconducting nature; solid-state method; temperature function; Magnetic field measurement; Magnetic fields; Magnetic properties; Magnetization; Magnetoelectronics; Temperature; Temperature measurement; Arrott Plots; Arrott plots; Hopping conduction; Magnetic properties; Perovskite manganite; SE-VRH mechanism; Shklovskii-Efros variable-range-hopping (SE-VRH) mechanism; hopping conduction; magnetic properties; perovskite manganite;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2015.2433394
Filename
7108041
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