• DocumentCode
    3602308
  • Title

    Temperature Stability of Exchange Bias Field and Magnetoresistance of Fe20Ni80 Layer in Fe20Ni80/Tb–Co Films

  • Author

    Kulesh, N.A. ; Balymov, K.G. ; Adanakova, O.A. ; Vas´kovskiy, V.O.

  • Author_Institution
    Ural Fed. Univ., Yekaterinburg, Russia
  • Volume
    51
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The evolution of hysteresis and magnetoresistive properties of exchange-coupled Fe20Ni80/Tb-Co bilayers with modified interface was investigated in the temperature range from 79 to 450 K. Exchange bias field was shown to decrease monotonously with increasing temperature, demonstrating a very similar behavior for unmodified films and samples with ultrathin Ti spacer or selectively annealed permalloy layer. The observed dependence, therefore, is mostly attributed to the changes of the Tb-Co layer´s magnetization and magnetic anisotropy. Anisotropic magnetoresistance (AMR) value measured on all samples shown typical for the permalloy alloy reduction at higher temperatures regardless of the sample´s type. A simultaneous decrease of the exchange bias field and the value of the AMR effect was shown to open the possibility for the compensation of the temperature dependence of the medium´s response to the application of the external magnetic field.
  • Keywords
    Permalloy; annealing; cobalt alloys; enhanced magnetoresistance; exchange interactions (electron); magnetic anisotropy; magnetic hysteresis; magnetic thin films; metallic thin films; terbium alloys; thermal stability; Fe20Ni80-TbCo; anisotropic magnetoresistance; exchange bias field; exchange-coupled bilayers; external magnetic field; films; hysteresis; magnetic anisotropy; magnetization; magnetoresistive properties; modified interface; selectively annealed permalloy layer; temperature 79 K to 450 K; temperature stability; ultrathin Ti spacer; Magnetic anisotropy; Magnetic field measurement; Magnetic fields; Magnetic hysteresis; Magnetoresistance; Temperature measurement; Temperature sensors; Anisotropic magnetoresistance (AMR); anisotropic magnetoresistance; exchange bias; interface; multilayer films;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2015.2434599
  • Filename
    7109885