DocumentCode :
3602308
Title :
Temperature Stability of Exchange Bias Field and Magnetoresistance of Fe20Ni80 Layer in Fe20Ni80/Tb–Co Films
Author :
Kulesh, N.A. ; Balymov, K.G. ; Adanakova, O.A. ; Vas´kovskiy, V.O.
Author_Institution :
Ural Fed. Univ., Yekaterinburg, Russia
Volume :
51
Issue :
11
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
The evolution of hysteresis and magnetoresistive properties of exchange-coupled Fe20Ni80/Tb-Co bilayers with modified interface was investigated in the temperature range from 79 to 450 K. Exchange bias field was shown to decrease monotonously with increasing temperature, demonstrating a very similar behavior for unmodified films and samples with ultrathin Ti spacer or selectively annealed permalloy layer. The observed dependence, therefore, is mostly attributed to the changes of the Tb-Co layer´s magnetization and magnetic anisotropy. Anisotropic magnetoresistance (AMR) value measured on all samples shown typical for the permalloy alloy reduction at higher temperatures regardless of the sample´s type. A simultaneous decrease of the exchange bias field and the value of the AMR effect was shown to open the possibility for the compensation of the temperature dependence of the medium´s response to the application of the external magnetic field.
Keywords :
Permalloy; annealing; cobalt alloys; enhanced magnetoresistance; exchange interactions (electron); magnetic anisotropy; magnetic hysteresis; magnetic thin films; metallic thin films; terbium alloys; thermal stability; Fe20Ni80-TbCo; anisotropic magnetoresistance; exchange bias field; exchange-coupled bilayers; external magnetic field; films; hysteresis; magnetic anisotropy; magnetization; magnetoresistive properties; modified interface; selectively annealed permalloy layer; temperature 79 K to 450 K; temperature stability; ultrathin Ti spacer; Magnetic anisotropy; Magnetic field measurement; Magnetic fields; Magnetic hysteresis; Magnetoresistance; Temperature measurement; Temperature sensors; Anisotropic magnetoresistance (AMR); anisotropic magnetoresistance; exchange bias; interface; multilayer films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2015.2434599
Filename :
7109885
Link To Document :
بازگشت