• DocumentCode
    3602390
  • Title

    Exchange Bias Effect Determined by Anisotropic Magnetoresistance in CoxNi1−xO/Ni0.8Fe0.2 Bilayer System

  • Author

    Woosuk Yoo ; Seongmin Choo ; Kyujoon Lee ; Sinyong Jo ; Chun-Yeol You ; Jung-Il Hong ; Myung-Hwa Jung

  • Author_Institution
    Dept. of Phys., Sogang Univ., Seoul, South Korea
  • Volume
    51
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We prepared bilayer systems composed of the ferromagnetic (FM) layer Ni0.8Fe0.2 and the anti-FM (AFM) layer CoxNi1-xO (x = 0.3, 0.4, 0.5, and 0.6) using the dc/RF magnetron sputtering methods. Coercive field HC and exchange bias field HE, the shift field in hysteresis loop, were observed in all the Ni0.8Fe0.2/CoxNi1-xO bilayer systems after field cooling. The changes of HC and HE were explicitly studied for various parameters, such as the composition of AFM material x, the measured temperature T, and the direction of applied magnetic field. Measured anisotropic magnetoresistance (AMR) was analyzed to extract the HC and HE, since the peaks (maximum or minimum) in AMR do not appear exactly at the coercive field HC of the magnetic hysteresis measurement. We propose a new approach for the analysis of AMR to determine HC and HEB along the field angle θ with respect to the field-cooling direction. The results were compared with the variations of HEB and HC reported earlier.
  • Keywords
    antiferromagnetic materials; cobalt compounds; coercive force; enhanced magnetoresistance; exchange interactions (electron); ferromagnetic materials; iron alloys; magnetic anisotropy; magnetic cooling; magnetic hysteresis; magnetic thin films; nickel alloys; sputter deposition; CoxNi1-xO-Ni0.8Fe0.2; anisotropic magnetoresistance; antiferromagnetic materials; applied magnetic field; bilayer system; coercive field; dc-RF magnetron sputtering methods; exchange bias effect; ferromagnetic layer; field-cooling direction; hysteresis loop; magnetic hysteresis measurement; Magnetic field measurement; Magnetic fields; Magnetization; Magnetoresistance; Perpendicular magnetic anisotropy; Temperature measurement; Anisotropic magnetoresistance; Anisotropic magnetoresistance (AMR); Exchange bias; Magnetic anisotropy; Magnetic films; exchange bias; magnetic anisotropy; magnetic films;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2015.2435738
  • Filename
    7110603