• DocumentCode
    3602434
  • Title

    Co-Ferrite Thin Films With Perpendicular Magnetic Anisotropy

  • Author

    Xiaoxi Liu ; Shirasath, Sagar ; Shindoh, Kensuke

  • Author_Institution
    Fac. of Eng., Shinshu Univ., Nagano, Japan
  • Volume
    51
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Co-ferrite thin film with spinel structure is attractive for spintronics and multifunctional devices. So far, single-crystal substrates are necessary to introduce perpendicular magnetic anisotropy in co-ferrite films. In this paper, a unique process has been developed to deposit co-ferrite thin films onto thermally oxidized silicon wafer with perpendicular magnetic anisotropy. We have successfully prepared co-ferrite films with (00l) orientation. Those films show perpendicular coercivities as large as 12.8 kOe. X-ray diffractometry results revealed that compressive strain, which is introduced by the postannealing process rather than deposition process, is as large as 1.3% in films with (00l) orientation. The large coercivity and perpendicular magnetic anisotropy can be quantitatively explained by the magnetoelastic effect. This silicon-compatible fabrication process is useful to further extending the applications of co-ferrite films.
  • Keywords
    X-ray diffraction; annealing; cobalt compounds; compressive strength; ferrites; magnetic thin films; magnetoelastic effects; perpendicular magnetic anisotropy; sputter deposition; (00l) orientation; Co-ferrite thin films; CoFe2O4; SiO2; X-ray diffractometry; compressive strain; magnetoelastic effect; multifunctional devices; perpendicular coercivities; perpendicular magnetic anisotropy; post-annealing process; silicon-compatible fabrication process; single-crystal substrates; spinel structure; spintronics; thermally oxidized silicon wafer; Coercive force; Films; Magnetic domains; Magnetic resonance imaging; Probes; Saturation magnetization; Sputtering; Co-ferrite; Magnetic force microscope; high coercivity; magnetoelastic effect; perpendicular magnetic anisotropy; silicon-compatible fabrication;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2015.2436394
  • Filename
    7111358