Title :
Preparation of Anomalous Magnetoresistance and Transport Properties of Itinerant Ferromagnet Fe1–xCoxSi
Author :
Ou-Yang, T.Y. ; Shu, G.J. ; Hu, C.D. ; Chou, F.C.
Author_Institution :
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
DC magnetization, electrical transport, and magnetoresistance (MR) measurements of Fe1-xCoxSi single crystals with x ≈ 0.7-0.3 are reported. Fe1-xCoxSiseries presents a typical Stoner band excitation characteristic in the field-dependent magnetization profile. Co-doping (x > 0.3) in the Fe1-xCoxSi compound shows a semiconductor-to-metal transition. Enhanced positive MR has been observed when ~1/3 of the Fe was substituted with Co, which suggests that the spin density of states in the minor band (semiconductor characteristic) dominates the electronic properties.
Keywords :
band model of magnetism; cobalt; doping; electrical conductivity transitions; electronic density of states; enhanced magnetoresistance; ferromagnetic materials; iron alloys; magnetisation; silicon alloys; Co-doping; Fe1-xCoxSi; electrical transport; electronic properties; enhanced positive magnetoresistance; field-dependent magnetization profile; itinerant ferromagnet; magnetization; magnetoresistance measurements; minor band; semiconductor-to-metal transition; spin density of states; stoner band excitation; transport properties; Crystals; Magnetic fields; Magnetoresistance; Metals; Temperature; Temperature dependence; Temperature measurement; Electrical transport; electrical transport; ferromagnet; magnetization; magnetoresistance; magnetoresistance (MR);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2015.2434882
