Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs

Author

Mengwei Si ; Conrad, Nathan J. ; Sanghoon Shin ; Jiangjiang Gu ; Jingyun Zhang ; Alam, Muhammad Ashraful ; Ye, Peide D.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

62

Issue

11

fYear

2015

Firstpage

3508

Lastpage

3515

Abstract

In this paper, we report the observation of random telegraph noise (RTN) in highly scaled InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low-frequency noise were systematically studied for devices with various gate dielectrics, channel lengths, and nanowire diameters. Mobility fluctuation is identified to be the source of 1/f noise. The 1/f noise was found to decrease as the channel length scaled down from 80 to 20 nm comparing with classical theory, indicating the near-ballistic transport in highly scaled InGaAs GAA MOSFET. Low-frequency noise in ballistic transistors is discussed theoretically.

Keywords

1/f noise; III-V semiconductors; MOSFET; ballistic transport; gallium arsenide; indium compounds; semiconductor device noise; 1/f noise; GAA metal oxide semiconductor field effect transistor; InGaAs; RTN; channel length; gate dielectric; low-frequency noise; mobility fluctuation; nanowire diameter; near-ballistic III-V MOSFET; near-ballistic transport; random telegraph noise; 1f noise; Indium gallium arsenide; Logic gates; Low-frequency noise; MOSFET; Ballistic transport; InGaAs; MOSFET; gate-all-around (GAA); low-frequency noise; random telegraph noise (RTN); random telegraph noise (RTN).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2433921

Filename

7114260