Title :
Magnetic Anisotropy and Reversal in Epitaxial FeGa/MgO(001) Films Deposited at Oblique Incidence
Author :
Yao Zhang ; Qingfeng Zhan ; Zhenghu Zuo ; Huali Yang ; Xiaoshan Zhang ; Ying Yu ; Yiwei Liu ; Jun Wang ; Baomin Wang ; Run-Wei Li
Author_Institution :
Key Lab. of Magn. Mater. & Devices, Ningbo Inst. of Mater. Technol. & Eng., Ningbo, China
Abstract :
We have epitaxially deposited FeGa films onto MgO(001) substrates at an oblique angle φ varying from 0° to 45° and systematically investigated their magnetization reversal. The square and two-step hysteresis loops were observed in the samples deposited at φ = 0° and 15°. The reversed two-step and three-step hysteresis loops were observed in the samples deposited at φ = 30° and 45°, in which a strong uniaxial magnetic anisotropy Ku was induced by the oblique deposition. A model based on domain wall (DW) nucleation and propagation was employed to quantitatively describe the angular-dependent behaviors of FeGa epitaxial films, which indicates that, for the samples deposited with increasing φ, the 180° magnetic transitions occurring in the magnetic field orientation between -45° and 45° gradually change from the two successive 90° DW nucleations to the 180° DW nucleation.
Keywords :
gallium alloys; iron alloys; magnetic anisotropy; magnetic domain walls; magnetic epitaxial layers; magnetic hysteresis; magnetic transitions; magnetisation reversal; metallic epitaxial layers; nucleation; sputter deposition; vapour phase epitaxial growth; Fe81Ga19; MgO; MgO(001) substrates; angular dependent behavior; domain wall; epitaxial film deposition; magnetic field orientation; magnetic transitions; magnetization reversal; magnetron sputtering; nucleation; oblique incidence deposition; square hysteresis loops; two-step hysteresis loops; uniaxial magnetic anisotropy; Epitaxial growth; Magnetic switching; Magnetostriction; Perpendicular magnetic anisotropy; Switches; Epitaxial film; epitaxial film; magnetic anisotropy; magnetic reversal; oblique incidence;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2015.2438314