Title :
Uniaxial Magnetic Anisotropy in Amorphous CoFeB Films on Different Orientational GaAs Substrates
Author :
Tu, H.Q. ; You, B. ; Zhang, Y.Q. ; Gao, Y. ; Xu, Y.B. ; Du, J.
Author_Institution :
Dept. of Phys. & Collaborative Innovation, Nanjing Univ., Nanjing, China
Abstract :
In-plane uniaxial magnetic anisotropy (UMA) has been carefully studied for the same amorphous Co56Fe24B20 (CoFeB) film deposited on different orientational GaAs substrates. It was noted that a strong uniaxial anisotropy field (Hk) of ~270 Oe could be achieved with CoFeB film grown on GaAs(001) substrate, which is much larger than the largest value (150 Oe) reported before. In contrast, Hk was <;20 Oe when the same CoFeB film was deposited on (110) or (111) GaAs substrate. The angular dependence of Hk also behaved quite differently in these CoFeB films. Based on the surface morphology of the CoFeB/GaAs films, the possible mechanisms responsible for the different behavior of UMA were briefly discussed in terms of bond-orientational anisotropy model and random anisotropy model.
Keywords :
amorphous magnetic materials; boron alloys; cobalt alloys; ferromagnetic materials; iron alloys; magnetic anisotropy; magnetic thin films; metallic thin films; surface morphology; (110) GaAs substrate; (111) GaAs substrate; Co56Fe24B20; GaAs; GaAs(001) substrate; amorphous CoFeB films; angular dependence; bond-orientational anisotropy model; in-plane uniaxial magnetic anisotropy; orientational GaAs substrates; random anisotropy model; surface morphology; uniaxial anisotropy field; Anisotropic magnetoresistance; Films; Gallium arsenide; Iron; Magnetic anisotropy; Substrates; Surface morphology; Bond-orientational Anisotropy; Bond-orientational anisotropy (BOA); Random Anisotropy; Uniaxial Magnetic Anisotropy; random anisotropy; uniaxial magnetic anisotropy (UMA);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2015.2441719
