Title :
Perpendicular Magnetic Anisotropy for CoFeBZr/MgO
Author :
Joon Pyo Kil ; Dong Ik Suh ; Gi Yoon Bae ; Won Joon Choi ; Guk Cheon Kim ; Seung Mo Noh ; Wanjun Park
Author_Institution :
Dept. of Electron. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
We present the effects of Zr insertion (5%) in Co(65)Fe(20)B(10) on perpendicular magnetic anisotropy due to interfacial magnetization with MgO. Perpendicular magnetization is successfully formed with a stalking structure of Ta/CoFeBZr/MgO. The thickness margin for crossover of perpendicular and in-plane magnetization is increased to 1.52 nm with an enhancement of surface anisotropy energy because of reduced thickness dependence. The Gilbert damping parameter is determined to be as low as 0.004 based on the line width of ferromagnetic resonance. Moreover, the maximum effective anisotropy energy (Keff) was 1.63 Merg/cm3 for CoFeBZr.
Keywords :
boron alloys; cobalt alloys; ferromagnetic resonance; interface magnetism; iron alloys; magnesium compounds; magnetic anisotropy; perpendicular magnetic anisotropy; tantalum; zirconium alloys; Gilbert damping parameter; Ta-CoFeBZr-MgO; Zr insertion effects; ferromagnetic resonance; in-plane magnetization; interfacial magnetization; maximum effective anisotropy energy; perpendicular magnetic anisotropy; reduced thickness dependence; stalking structure; surface anisotropy energy; Anisotropic magnetoresistance; Damping; Junctions; Magnetic resonance; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Anisotropy energy; CoFeBZr; Perpendicular magnetic anisotropy; anisotropy energy; damping constant; damping constant.; magnetic tunnel junction; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2015.2441754
