${L}{text {1}}_{text {0}}$ -Ordered MnAl Thin Films With High Perpendicular Magnetic Anisotropy Using TiN Underlayers on Si Substrates

Author

Huang, Efrem Y. ; Kryder, Mark H.

Author_Institution

Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA

Volume

51

Issue

11

fYear

2015

Firstpage

1

Lastpage

4

Abstract

Processes for the sputter deposition of L1₀-ordered τ-phase MnAl thin films using conductive TiN underlayers on Si substrates have been developed. Deposition parameters were systematically varied and resulting films were characterized in terms of structural and magnetic properties. Fabricated films demonstrated strong (001) texture and high perpendicular magnetic anisotropy, with an out-of-plane coercivity H_c of up to 12 kOe, an anisotropy constant K_u of 1.0 × 10⁷ erg/cm³, a saturation magnetization M_s of 250 emu/cm³, and a squareness M_r/M_s of 0.9.

Keywords

aluminium alloys; coercive force; magnetic hysteresis; magnetic thin films; manganese alloys; metallic thin films; perpendicular magnetic anisotropy; sputter deposition; texture; titanium compounds; (001) texture; L1₀-ordered τ-phase MnAl thin films; MnAl-TiN; Si; Si substrates; anisotropy constant; conductive TiN underlayers; deposition parameters; high-perpendicular magnetic anisotropy; magnetic properties; out-of-plane coercivity; saturation magnetization; sputter deposition; squareness; structural properties; Annealing; Films; Perpendicular magnetic anisotropy; Saturation magnetization; Silicon; Substrates; Tin; $L1_{0}$ -ordered thin films; L10-ordered thin films; MnAl; TiN underlayer; perpendicular magnetic anisotropy; perpendicular magnetic anisotropy (PMA);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2015.2442574

Filename

7119575