DocumentCode :
3602891
Title :
Polycrystalline CPP-GMR Pseudospin Valves Using 
Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti<
Author :
Ye Du ; Furubayashi, T. ; Takahashi, Y.K. ; Sakuraba, Y. ; Hono, K.
Author_Institution :
Nat. Inst. for Mater. Sci., Tsukuba, Japan
Volume :
51
Issue :
11
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) using (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400°C shows a resistance change-area (Δ R A) product of 6.6 mΩ μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-alloy-based CPP-GMR device.
Keywords :
buffer layers; cobalt alloys; enhanced magnetoresistance; ferromagnetic materials; gallium alloys; germanium alloys; interface roughness; iron alloys; magnesium compounds; spin valves; titanium compounds; (001) textured layer; Co2Fe(Ga0.5Ge0.5)-(Mg0.5Ti0.5)O; conductive buffer layer; ferromagnetic layers; interfacial roughness; interfacial smoothness; magnetoresistance; magnetotransport properties; microstructure; polycrystalline CPP-GMR pseudospin valves; polycrystalline current-perpendicular-to-plane giant magnetoresistance pseudospin valves; resistance change-area product; size 2 nm to 10 nm; temperature 400 degC; Annealing; Buffer layers; Epitaxial growth; Giant magnetoresistance; Metals; Nonhomogeneous media; Silicon; CPP-GMR; Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR); Heusler alloy; polycrystals; read head sensors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2015.2442592
Filename :
7119594
Link To Document :
