Title :
The E-Field-Induced Volatile and Nonvolatile Magnetization Switching of CoNi Thin Films in CoNi/PMN-PT Heterostructures
Author :
Tianli Jin ; Jiangwei Cao ; Liang Hao ; Mingfeng Liu ; Ying Wang ; Dongping Wu ; Jianmin Bai ; Fulin Wei
Author_Institution :
Key Lab. for Magn. & Magn. Mater. of the Minist. of Educ., Lanzhou Univ., Lanzhou, China
Abstract :
In this paper, we report the giant electric-field (E-field)-induced magnetic anisotropy and magnetization switching in CoNi/Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMN-PT) magnetoelectric heterostructures. For CoNi/PMN-30%PT, the E-field-induced anisotropy shows a volatile behavior; whereas for CoNi/PMN-32%PT, a large and nonvolatile E-field-induced anisotropy field up to 54 kA/m is observed. These behaviors can be understood by measuring the strain versus the E-field curves of two kinds of substrates. On the basis of the E-field-induced nonvolatile magnetic switching, two stable magnetization states defined by applying E-field pulses were demonstrated in CoNi/PMN-32%PT heterostructure, which paves a new way for voltage-write magnetic random memory devices.
Keywords :
cobalt alloys; lead compounds; magnetic anisotropy; magnetic multilayers; magnetic switching; magnetoelectric effects; metallic thin films; nickel alloys; CoNi thin films; CoNi-Pb(Mg0.33Nb0.67)O3-PbTiO3; CoNi/PMN-PT magnetoelectric heterostructures; E-field pulses; e-field-induced nonvolatile magnetization switching; giant electric-field-induced magnetic anisotropy; nonvolatile E-field-induced anisotropy field; stable magnetization states; strain-electric field curves; volatile behavior; voltage-write magnetic random memory devices; Magnetization; Magnetoelectric effects; Nonvolatile memory; Perpendicular magnetic anisotropy; Strain; Switches; ME effect; Magnetoelectric (ME) effect; nonvolatile; strain; volatile;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2015.2443179
