• DocumentCode
    3603257
  • Title

    Ultrahigh Density Memristor Neural Crossbar for On-Chip Supervised Learning

  • Author

    Chabi, Djaafar ; Zhaohao Wang ; Bennett, Christopher ; Klein, Jacques-Olivier ; Weisheng Zhao

  • Author_Institution
    Inst. D´Electron. Fondamentale, Univ. of Paris-Sud, Orsay, France
  • Volume
    14
  • Issue
    6
  • fYear
    2015
  • Firstpage
    954
  • Lastpage
    962
  • Abstract
    Although there are many candidates for future computing systems, memristor-based neural crossbar (NC) is considered especially promising, thanks to their low power consumption, high density, and fault tolerance. However, their implementation is still hindered by the limitations of CMOS neuron and learning cells. In this paper, we present a memristor-based NC that implements on-chip supervised learning. Instead of using a standard CMOS neuron, a simple CMOS inverter realizes the activation function. More importantly, we propose a compact learning cell that consists of a crossbar latch of two antiparallel oriented binary memristors. This design allows for higher density integration and could be naturally extended to a multilayer neural network. Using the CMOS 40-nm design kit and a physics-based compact model of high-performance ferroelectric tunnel memristor, we performed transient simulations to validate the function of the proposed neural crossbar. Then, we construct a multilayer NC by cascading monolayer networks; thereby, enabling the network to learn nonlinearly separable functions (e.g., XOR function). Finally, the fault tolerance is evaluated with Monte Carlo simulation. Analysis of simulation results demonstrates promising applications of our proposed neural crossbar for on-chip supervised learning.
  • Keywords
    CMOS integrated circuits; Monte Carlo methods; fault tolerance; learning (artificial intelligence); low-power electronics; memristors; neural chips; CMOS design kit; CMOS inverter; CMOS neuron; Monte Carlo simulation; compact learning cell; computing systems; crossbar latch; fault tolerance; ferroelectric tunnel memristor; learning cells; low power consumption; memristor based neural crossbar; monolayer networks; multilayer neural network; on-chip supervised learning; size 40 nm; ultrahigh density memristor neural crossbar; CMOS integrated circuits; Memristors; Neural networks; Supervised learning; Transistors; Crossbar; Ferroelectric tunnel memristor; Memristor; Neural network; On-chip supervised learning; ferroelectric tunnel memristor; memristor; neural network; on-chip supervised learning;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2015.2448554
  • Filename
    7130643