DocumentCode :
3603531
Title :
PCMLogging: Optimizing Transaction Logging and Recovery Performance with PCM
Author :
Shen Gao ; Jianliang Xu ; Harder, Theo ; Bingsheng He ; Choi, Byron ; Haibo Hu
Author_Institution :
Dept. of Comput. Sci., Hong Kong Baptist Univ., Kowloon Tong, China
Volume :
27
Issue :
12
fYear :
2015
Firstpage :
3332
Lastpage :
3346
Abstract :
Phase-change memory (PCM), as one of the most promising next-generation memory technologies, offers various attractive properties such as non-volatility, byte addressability, bit alterability, and low idle energy consumption. Recently, PCM has drawn much attention from the database community for optimizing query and transaction performance. As a complement to existing work, we present PCMLogging, a novel logging scheme that exploits PCM for both data caching and transaction logging to minimize I/O accesses in disk-based databases. Specifically, PCMLogging caches dirty pages/records in PCM and further maintains an implicit log in the cached updates to support database recovery. By integrating log and cached updates, PCMLogging enables simplified recovery and prolongs PCM lifetime. Furthermore, using PCMLogging, we develop a wear-leveling algorithm, that evenly distributes the write traffic across the PCM storage space, and a cost-based destaging algorithm that adaptively migrates cached data from PCM to external storage. Compared to classical write-ahead logging (WAL), our trace-driven simulation results reveal up to 1 20X improvement in system throughput.
Keywords :
cache storage; circuit optimisation; phase change memories; query processing; system monitoring; PCMLogging scheme; WAL; cost-based destaging algorithm; data caching; database community; database recovery performance; disk-based databases; next-generation memory technology; phase-change memory; query optimization; trace-driven simulation; transaction logging optimization; transaction performance; wear-leveling algorithm; write-ahead logging; Concurrency control; Database systems; Nonvolatile memory; Phase change materials; Random access memory; Phase-change memory; caching; database recovery; performance;
fLanguage :
English
Journal_Title :
Knowledge and Data Engineering, IEEE Transactions on
Publisher :
ieee
ISSN :
1041-4347
Type :
jour
DOI :
10.1109/TKDE.2015.2453154
Filename :
7150536
Link To Document :
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