Title :
Low Voltage Organic/Inorganic Hybrid Complementary Inverter With Low Temperature All Solution Processed Semiconductor and Dielectric Layers
Author :
Xiaojun Guo ; Linrun Feng ; Qingyu Cui ; Xiaoli Xu
Author_Institution :
Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
A novel organic/inorganic hybrid integration architecture was developed to realize low-voltage complementary inverters with low temperature (not exceeding 150°C) solution processed semiconductor and dielectric layers. The p-type organic transistor and n-type zinc-oxide transistor used different approaches to reduce the operation voltage, and can thus be easier to be integrated with compatible solution based processes.
Keywords :
II-VI semiconductors; dielectric thin films; liquid phase deposition; logic gates; low-power electronics; organic-inorganic hybrid materials; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; low temperature solution processed dielectric layers; low temperature solution processed semiconductor layer; low voltage organic-inorganic hybrid complementary inverter; n-type zinc-oxide transistor; operation voltage; p-type organic transistor; Dielectrics; Inverters; Logic gates; Low voltage; Thin film transistors; Zinc oxide; Low voltage; complementary logic; inverter; inverter.; metal oxide; organic semiconductor; thin-film transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2308210
