Title :
All-Digital Fast-Locking Delay-Locked Loop Using a Cyclic-Locking Loop for DRAM
Author :
Dong-Hoon Jung ; Young-Jae An ; Kyungho Ryu ; Jung-Hyun Park ; Seong-Ook Jung
Author_Institution :
Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
A fast-locking all-digital delay-locked loop (DLL) with closed-loop duty-cycle correction (DCC) capability is proposed for clock synchronization in DRAM. A new cyclic-locking loop is proposed to resolve the locking speed degradation due to the replica delay line (RDL) in the DLL. The proposed cycliclocking loop operates asynchronously and offers an optimal loop delay for DLL locking. The locking time of the proposed DLL is decreased by more than 34.1% compared to that of previous fast-locking DLLs using a successive approximation register algorithm. The proposed DLL is fabricated using 65-nm CMOS process technology on an active area of 465.1 × 37 μm2 and uses a 1.1-V supply voltage. The operating frequency range is 400-800 MHz, and 3.52 mW is consumed at 800 MHz, resulting in a power consumption of 4.4 pJ/Hz. The measured locking time ranges from 38 to 41 cycles over the entire operating frequency range.
Keywords :
CMOS memory circuits; DRAM chips; delay lock loops; synchronisation; CMOS process technology; DRAM; all-digital delay lock loop; clock synchronization; closed loop duty cycle correction; cyclic locking loop; cycliclocking loop; fast locking delay lock loop; frequency 400 MHz to 800 MHz; power 3.52 mW; replica delay line; size 65 nm; voltage 1.1 V; Delay lines; Delays; Image edge detection; Jitter; Power demand; Random access memory; Synchronization; Delay-locked loop (DLL); duty-cycle correction (DCC); dynamic RAM (DRAM); fast-locking DLL;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2015.2456111