Effects of Mesa Size on Current Spreading and Light Extraction of GaN-Based LEDs

Author

Ray-Hua Horng ; Ken-Yen Chen ; Ching-Ho Tien ; Jung-Chuan Liao

Author_Institution

Grad. Inst. of Precision Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

Volume

11

Issue

12

fYear

2015

Firstpage

1010

Lastpage

1013

Abstract

The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: 350×950 μm² (small-size embedded electrodes: GaN LED, S-LED), 500×950 μm² (medium-size embedded electrodes: GaN LED, M-LED), 950×950 μm² (large-size embedded electrodes : GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at 700 mA/mm² for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential.

Keywords

III-V semiconductors; current density; electron-hole recombination; gallium compounds; light emitting diodes; wide band gap semiconductors; GaN; GaN-based LED; current density; current spreading; electron-hole recombination rate; heat dissipation performance; large-size embedded electrodes; light extraction efficiency; light-emitting diodes; medium-size embedded electrodes; mesa area size; mesa size effect; output power; small-size embedded electrodes; Current density; Electrodes; Gallium nitride; Heating; Light emitting diodes; Power generation; Proximity effects; Current density; GaN light-emitting diode (LED); heat dissipation; light extraction efficiency (LEE); mesa size;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2461015

Filename

7167672