Author_Institution :
Grad. Inst. of Precision Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: 350×950 μm2 (small-size embedded electrodes: GaN LED, S-LED), 500×950 μm2 (medium-size embedded electrodes: GaN LED, M-LED), 950×950 μm2 (large-size embedded electrodes : GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at 700 mA/mm2 for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential.
Keywords :
III-V semiconductors; current density; electron-hole recombination; gallium compounds; light emitting diodes; wide band gap semiconductors; GaN; GaN-based LED; current density; current spreading; electron-hole recombination rate; heat dissipation performance; large-size embedded electrodes; light extraction efficiency; light-emitting diodes; medium-size embedded electrodes; mesa area size; mesa size effect; output power; small-size embedded electrodes; Current density; Electrodes; Gallium nitride; Heating; Light emitting diodes; Power generation; Proximity effects; Current density; GaN light-emitting diode (LED); heat dissipation; light extraction efficiency (LEE); mesa size;
