Title :
How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis
Author :
Shayesteh, Maryam ; Duffy, Ray
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Abstract :
In this paper, the authors investigate how target sputtering, dose retention, and damage formation is generated in thin-body semiconductors by means of energetic ion impacts. The problems associated with ion implanting or plasma doping Si thin-bodies are well documented, however, it is not clear how changing the target material to other semiconductors currently being considering for multi-gate field-effect transistor devices will counteract or enhance these effects. By means of binary collision approximation based modeling with the Stopping and Range of Ions in Matter (SRIM) software, we explore the consequences of different target atomic density, lattice density, surface binding energies, and lattice binding energies on target sputtering, dose retention, and damage formation.
Keywords :
elemental semiconductors; field effect transistors; ion implantation; plasma applications; semiconductor device models; semiconductor doping; silicon; sputter etching; SRIM software; Si; Stopping and Range of Ions in Matter; atomic density; binary collision approximation based modeling; damage formation; dose retention; energetic ion impacts; ion implanting; lattice binding energies; lattice density; multigate field-effect transistor devices; plasma doping; surface binding energies; target sputtering; thin-body semiconductor doping; Field effect transistors; Germanium; III-V semiconductor materials; Semiconductor device doping; Silicon; Sputtering; Field effect transistors (FETs); III-V semiconductor materials; Semiconductor device doping; Semiconductors; field effect transistors (FETs); germanium; semiconductor device doping; silicon;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2015.2462713
