Title :
Ultra-Low Power Ni/HfO2/TiOx/TiN Resistive Random Access Memory With Sub-30-nA Reset Current
Author :
Kailiang Zhang ; Kuo Sun ; Fang Wang ; Yemei Han ; Zizhen Jiang ; Jinshi Zhao ; Baolin Wang ; Hongzhi Zhang ; Xiaochuan Jian ; Wong, H. S. Philip
Author_Institution :
Tianjin Key Lab. of Film Electron. & Commun. Devices, Tianjin Univ. of Technol., Tianjin, China
Abstract :
In this letter, we report ultra-low power (sub-30-nA reset current, Ireset) Ni/HfO2/TiOx/TiN RRAM devices that were fabricated with the rapid thermal oxidation of evaporated titanium. RRAM devices show forming-free, bipolar resistive switching behavior, low-resistive state (LRS) nonlinearity, good data retention, and stability. The resistive switching mechanism is mainly attributed to Schottky barrier modulation induced by O2- migration at the Ni/HfO2 interface. LRS/high-resistive state current conduction is controlled by Schottky emission/trap-controlled space-charge-limited current. The TiOx film is believed to provide a local high-density current for the device, confirmed by conductive atomic force microscope results.
Keywords :
Schottky barriers; hafnium compounds; low-power electronics; nickel alloys; oxidation; rapid thermal processing; resistive RAM; titanium compounds; Ni-HfO2-TiOx-TiN; Schottky barrier modulation; atomic force microscopy; bipolar resistive switching; data retention; forming-free resistive switching; rapid thermal oxidation; resistive random access memory; ultralow power RAM; Films; Hafnium compounds; Nickel; Random access memory; Resistance; Switches; Tin; HfO2; LRS nonlinearity; Low power consumption; Resistive Random Access Memory (RRAM); low power consumption; resistive random access memory (RRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2464239
