DocumentCode :
3604237
Title :
Wafer-Level Vacuum-Encapsulated Lamé Mode Resonator With f-Q Product of 
Hz
Author :
Xereas, George ; Chodavarapu, Vamsy P.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Volume :
36
Issue :
10
fYear :
2015
Firstpage :
1079
Lastpage :
1081
Abstract :
We present a wafer-level vacuum-encapsulated silicon resonator fabricated in MEMS Integrated Design for Inertial Sensors, a commercial pure-play MEMS process, recently introduced by Teledyne DALSA Semiconductor Inc. Our prototype Lamé mode encapsulated in an ultra-clean 10-mtorr vacuum cavity, achieved a quality factor of 3.24 million at a resonance frequency of 6.89 MHz, resulting in the highest recorded f-Q product of 2.23 × 1013 Hz for wafer-level vacuum-encapsulated silicon resonators fabricated in a commercial MEMS process.
Keywords :
cavity resonators; microsensors; semiconductor technology; wafer level packaging; MEMS integrated design; Teledyne DALSA Semiconductor Inc; frequency 6.89 MHz; inertial sensors; resonance frequency; vacuum cavity; wafer-level vacuum-encapsulated lame mode resonator; wafer-level vacuum-encapsulated silicon resonator; Frequency control; Micromechanical devices; Q-factor; Resistance; Resonant frequency; Sensors; Silicon; MEMS resonator; Silicon Lame mode resonator; Silicon lame mode resonator; commercial pure-play MIDIS process; ultra-clean vacuum-encapsulation; wafer-level packaging;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2464713
Filename :
7180306
Link To Document :
