• DocumentCode
    3604237
  • Title

    Wafer-Level Vacuum-Encapsulated Lamé Mode Resonator With f-Q Product of 2.23 \\times 10^{13} Hz

  • Author

    Xereas, George ; Chodavarapu, Vamsy P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
  • Volume
    36
  • Issue
    10
  • fYear
    2015
  • Firstpage
    1079
  • Lastpage
    1081
  • Abstract
    We present a wafer-level vacuum-encapsulated silicon resonator fabricated in MEMS Integrated Design for Inertial Sensors, a commercial pure-play MEMS process, recently introduced by Teledyne DALSA Semiconductor Inc. Our prototype Lamé mode encapsulated in an ultra-clean 10-mtorr vacuum cavity, achieved a quality factor of 3.24 million at a resonance frequency of 6.89 MHz, resulting in the highest recorded f-Q product of 2.23 × 1013 Hz for wafer-level vacuum-encapsulated silicon resonators fabricated in a commercial MEMS process.
  • Keywords
    cavity resonators; microsensors; semiconductor technology; wafer level packaging; MEMS integrated design; Teledyne DALSA Semiconductor Inc; frequency 6.89 MHz; inertial sensors; resonance frequency; vacuum cavity; wafer-level vacuum-encapsulated lame mode resonator; wafer-level vacuum-encapsulated silicon resonator; Frequency control; Micromechanical devices; Q-factor; Resistance; Resonant frequency; Sensors; Silicon; MEMS resonator; Silicon Lame mode resonator; Silicon lame mode resonator; commercial pure-play MIDIS process; ultra-clean vacuum-encapsulation; wafer-level packaging;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2464713
  • Filename
    7180306