The High Power up to 1 W Characteristics of the Capacitive Microwave Power Sensor With Grounded MEMS Beam

Author

Hao Yan ; Xiaoping Liao

Author_Institution

Key Lab. of MEMS, Southeast Univ., Nanjing, China

Volume

15

Issue

12

fYear

2015

Firstpage

6765

Lastpage

6766

Abstract

The high-power up to 1 W characteristics of a capacitive microwave power sensor with grounded microelectromechanical systems beam is first investigated, in this letter. The device has been fabricated using GaAs MMIC processes. The experiment results indicate that the sensitivity of this power sensor degenerates gradually, as input microwave power increase slowly. The measurement results are divided into three regions: linear region; transitional region; and saturated region, and the corresponding sensitivities are 2.86, 2.18, and 1.68 fF/W at 10 GHz, respectively. This effect results from the impedance mismatch of the device at high power, and the relevant modified formula is given.

Keywords

III-V semiconductors; MMIC; capacitance measurement; capacitive sensors; gallium arsenide; microfabrication; microsensors; microwave detectors; microwave measurement; power measurement; GaAs; MMIC processing; capacitive microwave power sensor; frequency 10 GHz; grounded MEMS beam; impedance mismatch; microelectromechanical system; Capacitance; Capacitive sensors; Micromechanical devices; Microwave communication; Microwave measurement; Sensor phenomena and characterization; High power; grounded beam; microelectromechanical systems (MEMS); microwave power sensor;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2015.2466462

Filename

7182752