DocumentCode :
3604453
Title :
Improving Electrical Performances of 
-Type SnO Thin-Film Transistors Using Double-Gated Structure
Author :
Chia-Wen Zhong ; Horng-Chih Lin ; Kou-Chen Liu ; Tiao-Yuan Huang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
36
Issue :
10
fYear :
2015
Firstpage :
1053
Lastpage :
1055
Abstract :
p-type SnO thin-film transistors (TFTs) using a nominally symmetrical double-gated (DG) structure were studied in this letter. The top and bottom gates can be biased independently (single-gated mode) or jointly to switch the device (DG mode). For the latter operation, it is shown that ON current, subthreshold swing, and OFF-state current of the SnO TFT are all improved as compared with the operations when only one of the two gates is biased. As the device is operated under the DG mode, field-effect mobility of 6.54 cm2/V-s, high ON/OFF current ratio of > 105, and subthreshold swing of 143 mV/decade are obtained. Moreover, the capability of the device in tuning its transfer characteristics under the single-gated operation with the bias applied to the opposite gate is also confirmed.
Keywords :
thin film transistors; tin compounds; OFF-state current; ON current; SnO; electrical performances; field-effect mobility; nominally symmetrical double-gated structure; p-type thin-film transistors; single-gated mode; subthreshold swing; Electrodes; Fabrication; Films; Logic gates; Metals; Performance evaluation; Thin film transistors; SnO; double gate; metal oxide; thin-film transistor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2465144
Filename :
7192606
Link To Document :
