Title :
CMOS SPAD Based on Photo-Carrier Diffusion Achieving PDP >40% From 440 to 580 nm at 4 V Excess Bias
Author :
Veerappan, Chockalingam ; Charbon, Edoardo
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
A wide spectral response standard CMOS single-photon avalanche diode enabling simplified circuit interface for large array realization is reported. In this letter, the conventional p+ -nwell junction photon detection probability (PDP) profile is enhanced utilizing photo-carrier diffusion processes, resulting in a considerable expansion of the sensitivity spectrum of more than 30%. The proposed device achieves PDP greater than 40% from 440 to 580 nm at a low excess bias, while the dark count rate is 16 Hz/μm2 and timing jitter (full-width at half-maximum) is 95 ps when using a 405-nm laser.
Keywords :
CMOS image sensors; avalanche photodiodes; p-n junctions; photodetectors; timing jitter; CMOS SPAD; PDP; conventional p+ -nwell junction photon detection probability profile; dark count rate; excess bias; full-width at half-maximum; large array realization; laser; photocarrier diffusion; sensitivity spectrum; simplified circuit interface; time 95 ps; timing jitter; voltage 4 V; wavelength 405 nm; wavelength 440 nm to 580 nm; wide spectral response standard CMOS single-photon avalanche diode; CMOS integrated circuits; CMOS technology; Junctions; Performance evaluation; Photonics; Substrates; Temperature measurement; CMOS; Single-photon avalanche diode (SPAD); low cross-talk; substrate isolation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2468067
