DocumentCode
3604727
Title
Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx :O Bilayer Structure
Author
Tae Ho Lee ; Ju Hyun Park ; Tae Geun Kim
Author_Institution
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Volume
36
Issue
10
fYear
2015
Firstpage
1024
Lastpage
1026
Abstract
In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (~0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 103, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 105 cycle endurance without degradation, and dc test showed over 102 cycle endurance. Furthermore, data retention time was >105 s at room temperature.
Keywords
Schottky barriers; bipolar memory circuits; gallium compounds; logic testing; low-power electronics; oxygen; rectification; resistive RAM; semiconductor doping; silicon compounds; switching circuits; AC-pulse program time; DC test; GaO-SiNx:O; Schottky contact; bilayer structure; current 1 muA; data retention time; diode-like bipolar resistive switching; erase tests; gallium oxide-oxygen doped silicon nitride; high-density crossbar array structures; rectification ratios; resistive switching device; sneak-path currents; ultralow power characteristics; ultralow power operating behavior; voltage 0.5 V; Periodic structures; Reliability; Schottky barriers; Schottky diodes; Switches; Voltage measurement; Bilayer; Diodelike; Gallium oxide; Resistive random access memory; Silicon nitride; diodelike; gallium oxide; resistive random access memory; silicon nitride;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2470515
Filename
7210154
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