Title :
Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs
Author :
Salemi, Arash ; Elahipanah, Hossein ; Zetterling, Carl-Mikael ; Ostling, Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden
Abstract :
Three 4H-SiC bipolar junction transistor designs with different emitter cell geometries (linear interdigitated fingers, square cell geometry, and hexagon cell geometry) are fabricated, analyzed, and compared with respect to current gain, ON-resistance (RON), current density (JC), and temperature performance for the first time. Emitter size effect and surface recombination are investigated. Due to a better utilization of the base area, optimal emitter cell geometry significantly increases the current density about 42% and reduces the ON-resistance about 21% at a given current gain, thus making the device more efficient for high-power and high-temperature applications.
Keywords :
current density; power bipolar transistors; silicon compounds; surface recombination; wide band gap semiconductors; ON-resistance; SiC; bipolar junction transistor designs; current density; current gain; emitter cell geometries; emitter size effect; hexagon cell geometry; high power 4H-SiC BJT; linear interdigitated fingers; optimal emitter cell geometry; square cell geometry; surface recombination; temperature performance; Current density; Fingers; Geometry; Junctions; Passivation; Silicon carbide; ON-resistance; Power 4H-SiC BJTs; current density; current gain; surface recombination;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2470558
