• DocumentCode
    3604784
  • Title

    Above-Threshold 1!/!f Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise

  • Author

    Hongyu He ; Xueren Zheng ; Shengdong Zhang

  • Author_Institution
    Shenzhen Grad. Sch., Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
  • Volume
    36
  • Issue
    10
  • fYear
    2015
  • Firstpage
    1056
  • Lastpage
    1059
  • Abstract
    The 1/f noise expression is presented for the amorphous InGaZnO thin-film transistors (TFTs) at low drain voltage. Considering the mobility power-law parameter α in the TFTs, Ghibaudo´s carrier number fluctuation model with the series resistance noise is applied to obtain the analytical normalized drain current noise power spectral density expression. The expression is compared with the numerical calculation, and verified by the available experimental data.
  • Keywords
    1/f noise; semiconductor device models; semiconductor device noise; thin film transistors; InGaZnO; Analytical models; Low-frequency noise; Resistance; Silicon; Thin film transistors; InGaZnO (IGZO); Thin-film transistor (TFT); low frequency noise; series resistance noise;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2469723
  • Filename
    7214228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3604784